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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
PA2700GR
SWITCHING N-CHANNEL POWER MOS FET
DESCRIPTION
The PA2700GR is N-Channel MOS Field Effect Transistor designed for DC/DC converters and power management applications of notebook computers.
PACKAGE DRAWING (Unit: mm)
8 5 1, 2, 3 ; Source 4 ; Gate 5, 6, 7, 8 ; Drain
FEATURES
* Low on-state resistance RDS(on)1 = 5.3 m MAX. (VGS = 10 V, ID = 9.0 A) RDS(on)2 = 7.3 m MAX. (VGS = 4.5 V, ID = 9.0 A) * Low Ciss: Ciss = 2600 pF TYP. (VDS = 10 V, VGS = 0 V) * Small and surface mount package (Power SOP8)
1 4 5.37 MAX.
+0.10 -0.05
6.0 0.3 4.4 0.8
1.8 MAX.
1.44
0.15
0.05 MIN.
0.5 0.2 0.10
ORDERING INFORMATION
PART NUMBER PACKAGE Power SOP8
1.27 0.78 MAX. 0.40
+0.10 -0.05
0.12 M
PA2700GR
ABSOLUTE MAXIMUM RATINGS (TA = 25C, All terminals are connected.)
Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) Drain Current (pulse)
Note1 Note2
VDSS VGSS ID(DC) ID(pulse) PT Tch Tstg
30 20 17 68 2.0 150 -55 to + 150 17 28.9
V V A A W C C A mJ
Source Gate Drain
EQUIVALENT CIRCUIT
Total Power Dissipation (TA = 25C) Channel Temperature Storage Temperature Single Avalanche Current Single Avalanche Energy
Note3 Note3
Body Diode
IAS EAS
Notes 1. PW 10 s, Duty Cycle 1% 2 2. Mounted on ceramic substrate of 1200 mm x 2.2 mm 3. Starting Tch = 25C, VDD = 15 V, RG = 25 , L = 100 H, VGS = 20 0 V Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred.
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for availability and additional information.
Document No. G15672EJ2V0DS00 (2nd edition) Date Published May 2002 NS CP(K) Printed in Japan
The mark 5 shows major revised points.
(c)
2002
PA2700GR
ELECTRICAL CHARACTERISTICS (TA = 25C, All terminals are connected.)
CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance SYMBOL IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 RDS(on)3 Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr VDD = 15 V VGS = 5 V ID = 17 A IF = 17 A, VGS = 0 V IF = 17 A, VGS = 0 V di/dt = 100 A/ s TEST CONDITIONS VDS = 30 V, VGS = 0 V VGS = 20 V, VDS = 0 V VDS = 10 V, ID = 1 mA VDS = 10 V, ID = 9.0 A VGS = 10 V, ID = 9.0 A VGS = 4.5 V, ID = 9.0 A VGS = 4.0 V, ID = 9.0 A VDS = 10 V VGS = 0 V f = 1 MHz VDD = 15 V, ID = 9.0 A VGS = 10 V RG = 10 1.5 11 2.0 21.5 4.2 5.5 6.3 2600 1000 340 20 24 75 22 26 7 11 0.8 50 51 1.2 5.3 7.3 8.4 MIN. TYP. MAX. 10 100 2.5 UNIT
A
nA V S m m m pF pF pF ns ns ns ns nC nC nC V ns nC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T. RG = 25 PG. VGS = 20 0 V 50
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
L VDD PG. RG
VGS RL VDD VDS
90% 90% 10% 10%
VGS
Wave Form
0
10%
VGS
90%
BVDSS IAS ID VDD VDS
VGS 0
VDS
VDS
Wave Form
0 td(on) ton
= 1 s Duty Cycle 1%
tr
td(off) toff
tf
Starting Tch
TEST CIRCUIT 3 GATE CHARGE
D.U.T. IG = 2 mA PG. 50
RL VDD
2
Data Sheet G15672EJ2V0DS
PA2700GR
TYPICAL CHARACTERISTICS (TA = 25C)
5
120 DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 2.8 TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE
dT - Percentage of Rated Power - %
PT - Total Power Dissipation - W
100 80 60 40 20
2.4 2.0 1.6 1.2 0.8 0.4 0 0 20 40 60 80
Mounted on ceramic substrate of 1200 mm2 x2.2 mm
0
20
40
60
80
100
120 140
160
100 120 140
160
TA - Ambient Temperature - C
TA - Ambient Temperature - C
FORWARD BIAS SAFE OPERATING AREA 100
ID(pulse) = 68 A
PW
ID(DC) = 17 A
PW
PW =
=
1
m
ID - Drain Current - A
10
=
s
d ite ) Lim 0 V 1 n) o S( S = RD (VG
10
m
s
1
Po Lim we ite r Di ds
10
Remark Mounted on ceramic substrate of 1200 mm x 2.2 mm
2
0
m
s
sip
at
ion
0.1 TA = 25C Single Pulse 0.01 0.01 0.1
1
10
100
VDS - Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 100
rth(t) - Transient Thermal Resistance - C/ W
Rth(ch-A) = 62.5C/W
10
1
Mounted on ceramic substrate of 1200 mm 2 x 2.2 mm Single Pulse Channel to Ambient
0.1 0.001
0.01
0.1
1 10 PW - Pulse Width - s
100
1000
Data Sheet G15672EJ2V0DS
3
PA2700GR
DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 80 Pulsed 70 VGS = 10 V 60 50 40 30 20 10 0.01 0 1 2 3 VDS = 10 V 4 5 0 0.0 0.2 0.4 0.6 VDS - Drain to Source Voltage - V 4.5 V 4.0 V
FORWARD TRANSFER CHARACTERISTICS 100 Pulsed
ID - Drain Current - A
1
0.1
TA = 150C 75C 25C -25C
VGS - Gate to Source Voltage - V
ID - Drain Current - A RDS(on) - Drain to Source On-state Resistance - m
10
FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT
| yfs | - Forward Transfer Admittance - S
100
VDS = 10 V Pulsed TA = -25C 25C 75C 150C
DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 20 Pulsed 15
10
10
1
5 ID = 9.0 A 0
0.1 0.1
1
10
100
0
5
10
15
20
ID - Drain Current - A
VGS - Gate to Source Voltage - V
RDS(on) - Drain to Source On-state Resistance - m
DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT
GATE TO SOURCE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE
VGS(off) - Gate to Source Cut-off Voltage - V
14 Pulsed 12 10 8 VGS = 4.0 V 6 4.5 V 4 2 0 0.1 10 V
3
VDS = 10 V ID = 1 mA
2
1
1
10
100
0 -50 -25
0
25
50
75
100 125 150
ID - Drain Current - A
Tch - Channel Temperature - C
4
Data Sheet G15672EJ2V0DS
PA2700GR
RDS(on) - Drain to Source On-state Resistance - m
DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 20 Pulsed 15 100 Pulsed VGS = 0 V
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
ISD - Diode Forward Current - A
10
10
VGS = 4 V 4.5 V
1
5
10 V
0.1
0 -50
-25
0.01 0 25 50 75 100 125 150 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Tch - Channel Temperature - C
VSD - Source to Drain Voltage - V
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 10000 Ciss 1000 Coss Crss 100 1000
SWITCHING CHARACTERISTICS
td(on), tr, td(off), tf - Switching Time - ns
Ciss, Coss, Crss - Capacitance - pF
100
td(off) tr tf td(on)
10 VDD = 15 V VGS = 10 V RG = 10 1 10 100 ID - Drain Current - A
10 0.1
VGS = 0 V f = 1 MHz 1 10 100
1 0.1
VDS - Drain to Source Voltage - V
REVERSE RECOVERY TIME vs. DRAIN CURRENT 1000
DYNAMIC INPUT/OUTPUT CHARACTERISTICS 40
VDS - Drain to Source Voltage - V
trr - Reverse Recovery Time - ns
35 30 25 20 15 10 5 0 0 4 8 12 16 20 24 28 QG - Gate Charge - nC VDS ID = 17 A 32 36 VDD = 24 V 15 V 6V VGS
7 6 5 4 3 2 1 0 40
100
10
1 0.1
1
10
100
ID - Drain Current - A
VGS - Gate to Source Voltage - V
di/dt = 100 A/ s VGS = 0 V
8
Data Sheet G15672EJ2V0DS
5
PA2700GR
[MEMO]
6
Data Sheet G15672EJ2V0DS
PA2700GR
[MEMO]
Data Sheet G15672EJ2V0DS
7
PA2700GR
* The information in this document is current as of May, 2002. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. * No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document. * NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC semiconductor products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC or others. * Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. * While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC semiconductor products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment, and anti-failure features. * NEC semiconductor products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products developed based on a customer-designated "quality assurance program" for a specific application. The recommended applications of a semiconductor product depend on its quality grade, as indicated below. Customers must check the quality grade of each semiconductor product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness to support a given application. (Note) (1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above).
M8E 00. 4

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